Investigation of defects and striations in as‐grown Si crystals by SEM using Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88482
Reference9 articles.
1. Dislocations in vapor phase epitaxial GaP
2. Growth of Silicon Crystals Free from Dislocations
3. VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON
4. The Elimination of Vacancy-Cluster Formation in Dislocation-Free Silicon Crystals
5. Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystals
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1. Electron-Beam-Induced Current and Cathodoluminescence;Springer Series in Optical Sciences;1998
2. Effect of annealing and hydrogenation on neutron-transmutation-doped GaAs;Physica Status Solidi (a);1994-12-16
3. Impurity decoration of defects in float zone and polycrystalline silicon via chemomechanical polishing;Applied Physics Letters;1993-05-17
4. Hydrogen Incorporation in Crystalline Semiconductors;Hydrogen in Crystalline Semiconductors;1992
5. Present status and future of theoretical work on point defects and diffusion in semiconductors;Journal of Electronic Materials;1991-06
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