Effect of growth parameters on formation and elimination of vacancy clusters in dislocation-free silicon crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Etch Pits Observed in Dislocation-Free Silicon Crystals
2. 無転位シリコン単結晶中の点状欠陥
3. New X‐Ray Topographic Technique for Detection of Small Defects in Highly Perfect Crystals
4. VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON
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1. Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals;Springer Handbook of Crystal Growth;2010
2. Lateral incorporation of vacancies in Czochralski silicon crystals;Journal of Crystal Growth;2008-06
3. Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals;Journal of Crystal Growth;2008-01
4. Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals;Journal of Crystal Growth;2007-05
5. The agglomeration dynamics of self-interstitials in growing Czochralski silicon crystals;Journal of Crystal Growth;2005-11
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