Author:
Stringfellow G. B.,Lindquist P. F.,Cass T. R.,Burmeister R. A.
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. For a review of the effects of dislocations on semiconductor properties see: J. N. Hobstetter, in Semiconductors, N. B. Hannay, Ed. (Reinhold Publishing Corp., New York, 1960); R. Broudy, Advan. Phys. 12, 135 (1963); and R. G. Rhodes, Imperfections and Active Centers in Semiconductors (Macmillan, New York, 1964)·
2. G. B. Stringfellow and P. E. Greene, J. Appl. Phys. 40_, 502 (1969).
3. G. A. Rozgonyi and M. A. Afromowitz, Appl. Phys. Lett. 19_, 153 (1971).
4. H. C. Casey, Jr., J. Electrochem. Soc. 114, 153 (1967).
5. K. H. Zschauer, Solid State Commun. 7, 335 (1969).
Cited by
62 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献