Optical observation of mismatch dislocations in GaAs luminescent diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. OBSERVATION OF MISFIT DISLOCATIONS IN GaAs–Ge HETEROJUNCTIONS
2. Properties of luminescent GaAs p-n junctions with alloyed p-region
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1. References;Etching of Crystals - Theory, Experiment, and Application;1987
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4. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes;Journal of The Electrochemical Society;1979-04-01
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