Orientation dependence of blistering in H-implanted Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1334921
Reference18 articles.
1. Silicon on insulator material technology
2. Hydrogen blister depth in boron and hydrogen coimplanted n-type silicon
3. The History, Physics, and Applications of the Smart-Cut® Process
4. Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates
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3. Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature;Japanese Journal of Applied Physics;2019-02-04
4. The Effect of H-Implantation Energy on the Annealing Kinetics of Germanium Surface Blistering;ECS Transactions;2016-08-18
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