The Effect of H-Implantation Energy on the Annealing Kinetics of Germanium Surface Blistering

Abstract

The impact of implantation energy on hydrogen-induced blistering in germanium is investigated. The results demonstrated that the kinetic plots were shifted with the variation of H-implanted energy but also the plots with a break point, which is usually existed in Arrhenius straight-line plot for H-implanted Ge with a low energy or low dose, is changed into an unitary straight-line with increasing H implantation energy. The characterizations of the cross-section transmission electron microscopy (XTEM) indicate that <001> H-platelets parallel to germanium surface play a main role in the subsequent exfoliation. According to the observation of optical microscopy and the analysis of the statistical critical dimension (i.e. broken blisters), we propose that a mode can reasonably explain the critical dimension modification with H-implantation energy even though the same dimension <001> H-platelets is viewed.