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Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

  • Published:2016-04 Issue:2 Volume:29 Page:111-119
  • ISSN:0894-9166
  • Container-title:Acta Mechanica Solida Sinica
  • language:en
  • Short-container-title:Acta Mechanica Solida Sinica

Author:

Wang Bing,Gu Bin,Zhang Hongbin,Feng Xiqiao

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Computational Mechanics

Reference28 articles.

1. Silicon on insulator material technology;Bruel;Electronics Letters,1995

2. Application of hydrogen ion beams to silicon on insulator material technology;Bruel;Nuclear Instruments and Methods in Physical Research Section B,1996

3. Basic mechanisms involved in the Smart-Cut process;Aspar;Microelectronic Engineering,1997

4. Physical mechanisms behind the ion-cut in hydrogen implanted silicon;Höchbauer;Journal of Applied Physics,2002

5. Wafer bonding and H-implantation mechanisms involved in the Smart-Cut® technology;Maleville;Materials Science and Engineering B,1997
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