Dopant‐dependent formation and annealing of the dominant native deep‐level defect in liquid‐phase epitaxial AlGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342615
Reference29 articles.
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1. Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon;Semiconductors;2015-08
2. Deep levels in Yb–Al co-doped GaAs grown by liquid phase epitaxy;Materials Science in Semiconductor Processing;2006-02
3. Deep-level defects in MBE-grown Ga(As,N) layers;Physica B: Condensed Matter;2001-12
4. Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy;Journal of Applied Physics;2001-06
5. Deep-level defects near the surface of Be-doped GaAs grown by molecular beam epitaxy;Physica B: Condensed Matter;1999-12
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