Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1370115
Reference30 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements
4. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
5. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
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1. Influence of As/group-III flux ratio on defects formation and photovoltaic performance of GaInNAs solar cells;Solar Energy Materials and Solar Cells;2016-05
2. Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP;Journal of Applied Physics;2015-01-07
3. Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy;Japanese Journal of Applied Physics;2014-08-29
4. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing;Journal of Applied Physics;2014-07-07
5. GaInNAs(Sb) Long-Wavelength VCSELs;Springer Series in Optical Sciences;2012-10-16
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