Deep‐level distributions near p‐n junctions in LPE GaAs-Reference-Cited by-同舟云学术

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Deep‐level distributions near p‐n junctions in LPE GaAs

Published:1976-04 Issue:4 Volume:47 Page:1533-1537
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Lang D. V.¹,Logan R. A.¹

Affiliation:

1. Bell Laboratories, Murray Hill, New Jersey 07974

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference18 articles.

1. H. Okamoto, S. Sakata, and K. Sakai, J. Appl. Phys. 44, 1316 (1973).JAPIAU0021-8979

2. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).JAPIAU0021-8979

3. I. Hayashi, M. B. Panish, and F. K. Reinhart, J. Appl. Phys. 42, 1929 (1971).JAPIAU0021-8979

4. GaAs, grown by the horizontal Bridgeman technique by Laser Diode Laboratories, Inc., Metuchen, N.J.

5. G. L. Miller, IEEE Trans. Electron. Devices ED‐19, 1103 (1972).IETDAI0018-9383

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