“U-turn” feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903518
Reference14 articles.
1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
2. Efficiency droop in light-emitting diodes: Challenges and countermeasures
3. Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method
4. Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency
5. Identifying the cause of the efficiency droop in GaInN light-emitting diodes by correlating the onset of high injection with the onset of the efficiency droop
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