Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency-Reference-Cited by-同舟云学术

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

Published:2012-04-16 Issue:16 Volume:100 Page:161106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Guan-Bo,Meyaard David,Cho Jaehee,Fred Schubert E.,Shim Hyunwook,Sone Cheolsoo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4704366

Reference15 articles.

1. Faster recovery time of a hot-electron transition-edge sensor by use of normal metal heat-sinks

2. Carrier mobility model for GaN

3. Heavy doping effects in Mg-doped GaN

4. Efficiency droop in AlGaInP and GaInN light-emitting diodes

Cited by 142 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High performance deep-ultraviolet light-emitting diodes with transverse electron injection;Optics & Laser Technology;2024-10

2. Study on different isolation technology on the performance of blue micro-LEDs array applications;Discover Nano;2024-06-13

3. A Colloidal-Quantum-Dot Integrated U-Shape Micro-Light-Emitting-Diode and Its Photonic Characteristics;Nanomaterials;2024-05-27

4. Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication;IEEE Transactions on Electron Devices;2024-05

5. Deep-ultraviolet LEDs with an Al-graded p-AlGaN layer exhibiting high wall-plug efficiency and high modulation bandwidth simultaneously;Semiconductor Science and Technology;2024-02-16