Effects of grain boundaries on performance and hot-carrier reliability of excimer-laser annealed polycrystalline silicon thin film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1699504
Reference21 articles.
1. Effects of trap-state density reduction by plasma hydrogenation in low-temperature polysilicon TFT
2. Device Simulation of Grain Boundaries with Oxide-Silicon Interface Roughness in Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors
3. Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors
4. Dependence of polycrystalline silicon thin-film transistor characteristics on the grain-boundary location
5. Modeling and characterization of polycrystalline-silicon thin-film transistors with a channel-length comparable to a grain size
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