Paper No 10.3: Bridged-Grain Polycrystalline Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

Paper No 10.3: Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

Published:2013-09 Issue: Volume:44 Page:202-205
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Int Symp Dig Tec

Author:

Kwok Hoi Sing¹,Zhou Wei¹,Zhang Meng¹,Chen Rongsheng¹,Zhao Shuyun¹,Wong Man¹,Chen Shuming²,Chow Thomas²

Affiliation:

1. Center for Display Research; the Hong Kong University of Science and Technology, Clear Water Bay; Kowloon Hong Kong

2. Sinodisplay Technology Co., Ltd; Foshan Guangdong China

Publisher

Wiley

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sdtp.61/fullpdf

Reference22 articles.

1. Z. Meng H. Chen C. Qiu L. Wang H. Kwok M. Wong “Application of metal-induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to active-matrix organic light-emitting diode displays” 611 614 2000

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors;Nomura;Nature,2004

3. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties;Masuda;J. Appl. Phys.,2003

4. UV pulsed laser annealing of Si+ implanted silicon film and low-temperature super-thin film transistors;Morita;Jpn. J. Appl. Phys.,1989

5. High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous-silicon films;Hatalis;IEEE Electron Device Lett.,1987

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