Dependence of polycrystalline silicon thin-film transistor characteristics on the grain-boundary location
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1329141
Reference41 articles.
1. The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors
2. Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors
3. High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilane
4. Low-temperature single-crystal Si TFTs fabricated on Si films processed via sequential lateral solidification
5. Excimer laser-induced temperature field in melting and resolidification of silicon thin films
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