Growth of ScN(111) on Sc2O3(111) for GaN integration on Si(111): Experiment and ab-initio calculations-Reference-Cited by-同舟云学术

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Growth of ScN(111) on Sc2O3(111) for GaN integration on Si(111): Experiment and ab-initio calculations

Published:2016-10-07 Issue:13 Volume:120 Page:135103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sana P.¹^ORCID,Tetzner H.¹,Dabrowski J.¹,Lupina L.¹,Costina I.¹,Thapa S. B.²,Storck P.²,Schroeder T.¹³,Zoellner M. H.¹²

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt(Oder), Germany

2. Siltronic AG, Hans Seidel Platz 4, 81737 Munich, Germany

3. Brandenburgische Technische Universität Cottbus, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany

Funder

John von Neumann Institute for Computing (NIC)

Deutscher Akademischer Austauschdienst (DAAD)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4963826

Reference42 articles.

1. Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs

2. High-performance GaN p-n junction photodetectors for solar ultraviolet applications

3. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer

4. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

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1. Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism;Physical Chemistry Chemical Physics;2017

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