Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism-Reference-Cited by-同舟云学术

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism

Published:2017 Issue:32 Volume:19 Page:21467-21473
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zheng Yulin¹²³⁴⁵,Wang Wenliang¹²³⁴⁵,Li Xiaochan¹²³⁴⁵,Li Yuan¹²³⁴⁵,Huang Liegen¹²³⁴⁵,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640

4. China

5. Engineering Research Center on Solid-State Lighting and its Informationisation of Guangdong Province

Abstract

The polarity control of a GaN epitaxial film grown on LiGaO₂(001) substrates and its mechanism have been well studied. It is found that the GaN epitaxial film grown on nitrided LiGaO₂(001) substrates reveals Ga-polarity, while the GaN epitaxial film grown on non-nitrided LiGaO₂(001) substrates shows N-polarity.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP03812G

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