Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms

Author:

Zheng Yulin1,Wang Wenliang12,Li Xiaochan1,Li Yuan1,Yan Tao3,Ye Ning3ORCID,Li Guoqiang12ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

2. Guangdong Choicore Optoelectronics Co. Ltd., Heyuan 517003, China

3. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

National Defense Scientific and Technological Innovation Special Zone

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

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