Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms-Reference-Cited by-同舟云学术

Polarity-Controlled GaN Epitaxial Films Achieved via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms

Published:2018-06-26 Issue:28 Volume:122 Page:16161-16167
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zheng Yulin¹,Wang Wenliang¹²,Li Xiaochan¹,Li Yuan¹,Yan Tao³,Ye Ning³^ORCID,Li Guoqiang¹²^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China

2. Guangdong Choicore Optoelectronics Co. Ltd., Heyuan 517003, China

3. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

National Defense Scientific and Technological Innovation Special Zone

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.8b04410

Reference36 articles.