Photoreflectance study of hole‐subband structures in GaAs/InxAl1−xAs strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351579
Reference13 articles.
1. Optical properties of III–V strained-layer quantum wells
2. Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs
3. Photoluminescence study of InxAl1−xAs‐GaAs strained‐layer superlattices
4. Effective Mass Reversal on InxAl1-xAs/GaAs Strained-Layer Superlattices
5. Photoreflectance modulation mechanisms in GaAs-AlxGa1−xAs multiple quantum wells
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