Effective Mass Reversal on InxAl1-xAs/GaAs Strained-Layer Superlattices-Reference-Cited by-同舟云学术

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Effective Mass Reversal on InxAl1-xAs/GaAs Strained-Layer Superlattices

Published:1986-09-20 Issue:Part 1, No. 9 Volume:25 Page:1327-1331
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kato Hiromu,Iguchi Naoya,Chika Shigeaki,Nakayama Masaaki,Sano Naokatsu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system;Journal of Electronic Materials;1996-03

2. Photoreflectance study of hole‐subband structures in GaAs/InxAl1−xAs strained‐layer superlattices;Journal of Applied Physics;1992-09-15

3. Optical transitions in strained In/sub 0.53/Ga/sub 0.47/As/In/sub 1-x/Ga/sub x/As quantum wells;IEEE Photonics Technology Letters;1992-05

4. Hole-subband-order reversal in strained-layer superlattices investigated by photoreflectance spectroscopy;Superlattices and Microstructures;1992-01

5. Dislocations in strained-layer epitaxy: theory, experiment, and applications;Materials Science Reports;1991-11

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