GaAs1−yPyheterojunction lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.324235
Reference17 articles.
1. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx (x [inverted lazy s]0.4)
2. Liquid phase epitaxial (LPE) grown junction In1−xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K)
3. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
4. Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs
5. Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy(y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46)
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1. InGaAsP/InGaP buried heterostructure lasers at 810 nm;Journal of Applied Physics;1984-12
2. Very low threshold visible TS lasers;IEEE Journal of Quantum Electronics;1981-05
3. Continuous room-temperature photopumped laser operation of visible-spectrum LPE In<inf>1-x</inf>Ga<inf>x</inf>P<inf>1-z</inf>As<inf>z</inf>(λ ~ 6700 Å);IEEE Journal of Quantum Electronics;1981-02
4. Halbleiterlaser;Optoelektronik I;1981
5. Continuous operation of visible-spectrum in<inf>1-x</inf>Ga<inf>x</inf>P<inf>1-z</inf>As<inf>z</inf>laser diodes (6280 Å, 77 K);IEEE Journal of Quantum Electronics;1978-10
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