Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1496146
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4. Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks
5. The silicon-silicon dioxide system: Its microstructure and imperfections
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