Interface trap generation and electron trapping in fluorinated SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105643
Reference9 articles.
1. Radiation Response of MOS Capacitors Containing Fluorinated Oxides
2. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
3. MOS characteristics of fluorinated gate dielectrics grown by rapid thermal processing in O/sub 2/ with diluted NF/sub 3/
4. Hot-electron hardened Si-gate MOSFET utilizing F implantation
5. Improved hot-carrier resistance with fluorinated gate oxides
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1. Fluorinated $\hbox{SrTiO}_{3}$ as Charge-Trapping Layer for Nonvolatile Memory Applications;IEEE Transactions on Electron Devices;2011-12
2. Mutual deactivation of electrically active F interstitials and O vacancies into fluorine-oxygen-vacancy complexes inSiO2;Physical Review B;2009-05-06
3. Electrical characteristics of SiOxFy gate oxides formed by a plasma fluorination technique;Applied Physics Letters;2005-07-25
4. Dual role of fluorine at the Si–SiO2 interface;Applied Physics Letters;2004-11-22
5. On the role of hydrogen in hole-induced electron trap creation;Semiconductor Science and Technology;2004-09-30
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