Dual role of fluorine at the Si–SiO2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1825621
Reference18 articles.
1. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
2. Passivation of (111) Si/SiO2interface by fluorine
3. Interface trap generation and electron trapping in fluorinated SiO2
4. Segregation and defect termination of fluorine at SiO2/Si interfaces
5. Fluorine incorporation into gate stacks of advanced silicon memory technologies: Simulation, depth distribution, and reliability
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