On the role of hydrogen in hole-induced electron trap creation-Reference-Cited by-同舟云学术

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On the role of hydrogen in hole-induced electron trap creation

Published:2004-09-30 Issue:11 Volume:19 Page:1333-1338
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chang M H,Zhang J F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Lateral profiling of oxide charge and interface traps near MOSFET junctions

2. Effects of high field injection on the hot carrier induced degradation of submicrometer pMOSFET's

3. Modeling of SILC based on electron and hole tunneling. I. Transient effects

4. Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films

5. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxide Defects;Bias Temperature Instability for Devices and Circuits;2013-09-10

2. Kinetic Stress Testing and the Influence of Long-Time Anneals on the Behavior of IZO Thin Film Transistors;IEEE Transactions on Electron Devices;2013-05

3. Area Scaling for Backend Dielectric Breakdown;IEEE Transactions on Semiconductor Manufacturing;2010-08

4. Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides;IEEE Transactions on Electron Devices;2006-06

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