Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120991
Reference24 articles.
1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
4. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
5. Contactless electromodulation for the nondestructive, room-temperature analysis of wafer-sized semiconductor device structures
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3. Zn acceptor position in GaN:Zn probed by contactless electroreflectance spectroscopy;Applied Physics Letters;2018-07-16
4. Contactless electroreflectance studies of the Fermi level position at the air/GaN interface: Bistable nature of the Ga-polar surface;Applied Surface Science;2017-02
5. Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer;Journal of Applied Physics;2014-04-07
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