Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface-Reference-Cited by-同舟云学术

Origin of Surface Barrier Temperature Dependence for the Polar GaN Surface

Published:2022-10-04 Issue:10 Volume:4 Page:5017-5025
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zdanowicz Ewelina¹^ORCID,Herman Artur P.¹^ORCID,Sobanska Marta²,Zytkiewicz Zbigniew R.²^ORCID,Olszewski Wojciech³⁴,Hommel Detlef³,Kudrawiec Robert¹³^ORCID

Affiliation:

1. Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370Wrocław, Poland

2. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, Warszawa02-668, Poland

3. Łukasiewicz Research Network − PORT Polish Center for Technology Development, Stabłowicka 147, Wrocław54-066, Poland

4. Faculty of Physics, University of Wrocław, Plac Maxa Borna 9, 50-204Wrocław, Poland

Funder

Narodowe Centrum Nauki

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01016

Reference63 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

2. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

3. High-Luminosity Blue and Blue-Green Gallium Nitride Light-Emitting Diodes

4. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

5. Non-Polar Gallium Nitride for Photodetection Applications: A Systematic Review

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