Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870442
Reference26 articles.
1. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
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4. 200 W Output Power at S-Band in AlGaN/GaN Heterojunction Field Effect Transistors with Field Plates on Si Substrates
5. State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates
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2. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures;Semiconductor Science and Technology;2018-10-17
3. Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies;Journal of Physics D: Applied Physics;2016-07-28
4. Ab initiostudy of Ga-GaN system: Transition from adsorbed metal atoms to a metal–semiconductor junction;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-11
5. Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures;Semiconductor Science and Technology;2015-07-16
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