Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies-Reference-Cited by-同舟云学术

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Engineering of electric field distribution in GaN(cap)/AlGaN/GaN heterostructures: theoretical and experimental studies

Published:2016-07-28 Issue:34 Volume:49 Page:345106
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Gladysiewicz M,Janicki L,Misiewicz J,Sobanska M,Klosek K,Zytkiewicz Z R,Kudrawiec R

Funder

National Centre for Research and Development

National Science Centre

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=34/a=345106/pdf

Reference32 articles.

1. Nonlinear macroscopic polarization in III-V nitride alloys

2. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

3. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

4. Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

5. Progress in Piezotronics and Piezo-Phototronics

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4. Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*;Chinese Physics B;2021-06-01

5. The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation;Microelectronics Reliability;2020-12

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