Junction leakage studies in rapid thermal annealed diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95387
Reference8 articles.
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3. Annealing of implantation damage in integrated‐circuit devices using an incoherent light source
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5. Rapid thermal annealing of arsenic and boron‐implanted silicon
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1. Quantitative prediction of junction leakage in bulk-technology CMOS devices;Solid-State Electronics;2010-03
2. Millisecond annealing for complementary metal–oxide semiconductor source and drain implants;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1991-07
3. Rapid Thermal Annealing of Arsenic Implanted Monocrystalline Silicon;Physica Status Solidi (a);1991-03-16
4. Shallow junctions for ULSI technology;European Transactions on Telecommunications;1990-03
5. Silicon preamorphization and shallow junction formation for ULSI circuits;Journal of Electronic Materials;1989-11
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