Rapid isothermal annealing of boron ion implanted junctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331780
Reference15 articles.
1. Electrical and structural properties ofp‐njunctions in cw laser annealed silicon
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3. Transient annealing of arsenic‐implanted silicon using a graphite strip heater
4. Activation of arsenic‐implanted silicon using an incoherent light source
5. Rapid isothermal annealing of ion implantation damage using a thermal radiation source
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2. Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
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5. Improvement of Pin Photodiodes on the Soi Layer by Rapid Thermal Annealing;MRS Proceedings;1995
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