Redistribution of boron in silicon after Ne+postirradiation and thermal annealing-Reference-Cited by-同舟云学术

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Redistribution of boron in silicon after Ne+postirradiation and thermal annealing

Published:2000-02 Issue:1 Volume:152 Page:67-86
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Fink D.,Szimkowiak P.,Hu X.,Hnatowicz V.,Vacik J.,Chadderton L. T.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

http://www.tandfonline.com/doi/pdf/10.1080/10420150008211815

Reference29 articles.

1. Chu, A. and Gibbons, J. F. 1977.Ion Implantation in Semiconductors, Edited by: Chernov, F., Borders, J. A. and Brice, D. K. p. 711New York: Plenum.

2. Neutron depth profiling facility at Nuclear Physics Institute Rez

3. Neutron depth profiling: Overview and description of NIST facilities

4. Implantation and transient boron diffusion: the role of the silicon self-interstitial

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2. Physico-chemical modifications induced in Makrofol-N polycarbonate by swift heavy ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-09

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