Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates-Reference-Cited by-同舟云学术

Metalorganic molecular beam epitaxial growth and characterization of CdSe/ZnSe strained‐layer single quantum wells and superlattices on GaAs substrates

Published:1992-12 Issue:11 Volume:72 Page:5233-5239
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fujita Shizuo,Wu Yi‐hong,Kawakami Yoichi,Fujita Shigeo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.352005

Reference20 articles.

1. Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy

2. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy

3. Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

4. High quality ultrathin InAs/GaAs quantum wells grown by standard and low‐temperature modulated‐fluxes molecular beam epitaxy

5. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of CdSe Quantum Dot Sensitization on GaAs Luminescence Characteristics;Chinese Journal of Lasers;2019

2. Study of the coupling of ultra-thin CdSe double quantum wells;Superlattices and Microstructures;2015-11

3. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells;Semiconductors;2015-08

4. Extending the spectral range of CdSe/ZnSe quantum wells by strain engineering;Physical Review B;2015-01-12

5. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy;Applied Surface Science;2013-04