Dopant diffusion during high‐temperature oxidation of silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106118
Reference20 articles.
1. The effect of oxidation on the diffusion of phosphorus in silicon
2. Observation of Oxidation-Enhanced and -Retarded Diffusion of Antimony in Silicon: The Behavior of (111) Wafers
3. Oxidation Effects on Gallium Diffusion in Silicon
4. Kinetics of thermal nitridation processes in the study of dopant diffusion mechanisms in silicon
5. Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory
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