Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337003
Reference45 articles.
1. The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in Silicon
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3. Orientation dependence of the diffusion of boron in silicon
4. Oxidation Enhanced Diffusion of Boron and Phosphorus in (100) Silicon
5. Retardation of Sb Diffusion in Si during Thermal Oxidation
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