A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiNx coupled junction
Author:
Affiliation:
1. Department of Materials Science and Engineering, Hanyang University, Seoul 133-791, South Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927823
Reference21 articles.
1. A p-Type Amorphous Oxide Semiconductor and Room Temperature Fabrication of Amorphous Oxide p–n Heterojunction Diodes
2. High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications
3. Transparent p-CuI/n-ZnO heterojunction diodes
4. Fabricate Heterojunction Diode by Using the Modified Spray Pyrolysis Method to Deposit Nickel–Lithium Oxide on Indium Tin Oxide Substrate
5. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories
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