High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications-Reference-Cited by-同舟云学术

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High-Current-Density CuOx/InZnOxThin-Film Diodes for Cross-Point Memory Applications

Published:2008-08-18 Issue:16 Volume:20 Page:3066-3069
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Kang Bo Soo,Ahn Seung-Eon,Lee Myoung-Jae,Stefanovich Genrikh,Kim Ki Hwan,Xianyu Wen Xu,Lee Chang Bum,Park Youngsoo,Baek In Gyu,Park Bae Ho

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference18 articles.

1. Reproducible resistance switching in polycrystalline NiO films

2. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

3. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

4. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories

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