Facile passivation of solution-processed InZnO thin-film transistors by octadecylphosphonic acid self-assembled monolayers at room temperature
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4874303
Reference35 articles.
1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
2. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films
3. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
5. Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5gate dielectric
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1. Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation;Applied Surface Science;2024-08
2. Performance enhancement of solution-processed p-type CuI TFTs by self-assembled monolayer treatment;Applied Surface Science;2023-11
3. Improving the Electrical Performance of RF-Sputtered InSnZnO Thin-Film Transistors via Octadecylphosphonic Acid Self-Assembled Monolayer;2023 IEEE International Flexible Electronics Technology Conference (IFETC);2023-08-13
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