Improving the Electrical Performance of RF-Sputtered InSnZnO Thin-Film Transistors via Octadecylphosphonic Acid Self-Assembled Monolayer-Reference-Cited by-同舟云学术

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Improving the Electrical Performance of RF-Sputtered InSnZnO Thin-Film Transistors via Octadecylphosphonic Acid Self-Assembled Monolayer

Published:2023-08-13 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Flexible Electronics Technology Conference (IFETC)
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Author:

Chen Feilian¹,Yang Dongbu¹,Jiang Zhendong¹,Zhu Guanming¹,Zhang Meng¹,Wan Yunhao²,Chen Zhiying³

Affiliation:

1. College of Electronics and Information Engineering, Shenzhen University,Shenzhen,China

2. Institute of Microscale Optoelectronics (IMO), Shenzhen University,Shenzhen,China

3. School of Electrical and Electronic Engineering, Nanyang Technological University,Singapore

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10254736/10254789/10254817.pdf?arnumber=10254817

Reference17 articles.

1. Mechanisms for Enhanced Hydrophobicity by Atomic-Scale Roughness

2. Facile passivation of solution-processed InZnO thin-film transistors by octadecylphosphonic acid self-assembled monolayers at room temperature

3. Energy‐Band Engineering by Remote Doping of Self‐Assembled Monolayers Leads to High‐Performance IGZO/p‐Si Heterostructure Photodetectors

4. Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

5. Effect of Self-Assembled Monolayers (SAMs) as Surface Passivation on the Flexible a-InSnZnO Thin-Film Transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Benzylphosphonic acid treated ultra-thin ALD-InO_x for long term device stability;Journal of Materials Chemistry C;2024

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