Role of Adsorbed H$_{2}$O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/5/i=2/a=021101/pdf
Reference18 articles.
1. P-19: Effect of Back Channel Passivation on the Operation Stability of Solution-processed Transparent Oxide TFTs and Ring Oscillators
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
4. High Mobility Thin Film Transistors with Transparent ZnO Channels
5. The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors
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