Modulation of resistive switching properties of non-stoichiometric WO3−x based asymmetric MIM structure by interface barrier modification-Reference-Cited by-同舟云学术

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Modulation of resistive switching properties of non-stoichiometric WO3−x based asymmetric MIM structure by interface barrier modification

Published:2021-06-21 Issue:23 Volume:129 Page:235302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rudrapal Krishna¹,Mukherjee A.²,Adyam V.³,Roy Chaudhuri Ayan¹⁴^ORCID

Affiliation:

1. Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India

2. Functional Materials and Devices Division, CSIR-Central Glass and Ceramic Research Institute, Kolkata 700032 West Bengal, India

3. Cryogenic Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India

4. Materials Science Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India

Funder

Science and Engineering Research Board

Sponsored Research and Industrial Consultancy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0053511

Reference52 articles.

1. Complex Learning in Bio-plausible Memristive Networks

2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

3. Nanoionics-based resistive switching memories

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neuromorphic learning and recognition in WO_3−x thin film-based forming-free flexible electronic synapses;Nanotechnology;2024-08-23

2. Ag-dispersive chalcogenide media for readily activated electronic memristor;Applied Surface Science;2024-01

3. Non-stoichiometric WO3−x-based nanoscale memristor for high-density memory;AIP Advances;2023-08-01

4. Tuning resistive switching properties of WO₃₋_x-memristors by oxygen vacancy engineering for neuromorphic and memory storage applications;Journal of Physics D: Applied Physics;2023-03-30

5. Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO _3–x Based MIM Device;Advanced Electronic Materials;2022-06-22

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