Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications-Reference-Cited by-同舟云学术

Integration of graphene oxide buffer layer/graphene floating gate for wide memory window in Pt/Ti/Al2O3/GO/graphene/SiO2/p-Si/Au non-volatile (FLASH) applications

Published:2018-06-18 Issue:25 Volume:112 Page:252102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Soni Mahesh¹^ORCID,Soni Ajay²,Sharma Satinder K.¹^ORCID

Affiliation:

1. School of Computing and Electrical Engineering (SCEE), Indian Institute of Technology (IIT) Mandi, Mandi, Himachal Pradesh 175005, India

2. School of Basic Sciences (SBS), Indian Institute of Technology (IIT) Mandi, Mandi, Himachal Pradesh 175005, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5030020

Reference37 articles.

1. Graphene-Graphene Oxide Floating Gate Transistor Memory

2. Reduced Multilayer Graphene Oxide Floating Gate Flash Memory With Large Memory Window and Robust Retention Characteristics

3. A single-poly EEPROM cell for embedded memory applications

4. Isolated nanographene crystals for nano-floating gate in charge trapping memory

5. Graphene Flash Memory

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