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Graphene-Graphene Oxide Floating Gate Transistor Memory

Published:2014-08-28 Issue:3 Volume:11 Page:311-318
ISSN:1613-6810
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language:en
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Author:

Jang Sukjae¹,Hwang Euyheon¹²,Lee Jung Heon¹³,Park Ho Seok⁴,Cho Jeong Ho¹⁴

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT); Sungkyunkwan University; Suwon 440-746 Republic of Korea

2. Department of Physics; Sungkyunkwan University; Suwon 440-746 Republic of Korea

3. School of Advanced Materials Science and Engineering; Sungkyunkwan University; Suwon 440-746 Republic of Korea

4. School of Chemical Engineering; Sungkyunkwan University; Suwon 440-746 Republic of Korea

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Reference71 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Experimental observation of the quantum Hall effect and Berry's phase in graphene

3. Electronic spin transport and spin precession in single graphene layers at room temperature

4. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

5. Operation of Graphene Transistors at Gigahertz Frequencies

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