Isolated nanographene crystals for nano-floating gate in charge trapping memory-Reference-Cited by-同舟云学术

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Isolated nanographene crystals for nano-floating gate in charge trapping memory

Published:2013-07-03 Issue:1 Volume:3 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Yang Rong,Zhu Chenxin,Meng Jianling,Huo Zongliang,Cheng Meng,Liu Donghua,Yang Wei,Shi Dongxia,Liu Ming,Zhang Guangyu

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep02126.pdf

Reference36 articles.

1. International Technology Roadmap for Semiconductor Industry (ITRS), San Jose, CA (2009).

2. Lu, C.-Y., Hsieh, K.-Y. & Liu, R. Future challenges of flash memory technologies. Microelectronic engineering 86, 283–286 (2009).

3. Paul, S. et al. Langmuir−Blodgett Film Deposition of Metallic Nanoparticles and Their Application to Electronic Memory Structures. Nano Letters 3, 533–536 (2003).

4. Lee, J. J. & Kwong, D. L. Metal nanocrystal memory with high-κ tunneling barrier for improved data retention. IEEE Trans Electron Devices 52, 507–511 (2005).

5. Yim, S.-S., Lee, M.-S., Kim, K.-S. & Kim, K.-B. Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications. Appl. Phys. Lett. 89, 093115 (2006).

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