Circuit‐Level Memory Technologies and Applications based on 2D Materials-Reference-Cited by-同舟云学术

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Circuit‐Level Memory Technologies and Applications based on 2D Materials

Published:2022-10-27 Issue:48 Volume:34 Page:2202371
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Advanced Materials

Author:

Ma Jiahui¹,Liu Hefei¹,Yang Ning²,Zou Jingyi³,Lin Sen³,Zhang Yuhao⁴,Zhang Xu³,Guo Jing²,Wang Han¹⁵^ORCID

Affiliation:

1. Ming Hsieh Department of Electrical and Computer Engineering University of Southern California Los Angeles CA 90089 USA

2. Department of Electrical and Computer Engineering University of Florida Gainesville FL 32611 USA

3. Department of Electrical and Computer Engineering Carnegie Mellon University Pittsburgh PA 15213 USA

4. Center for Power Electronics Systems Virginia Polytechnic Institute and State University Blacksburg VA 24060 USA

5. Mork Family Department of Chemical Engineering and Materials Science University of Southern California Los Angeles CA 90089 USA

Funder

Army Research Office

National Science Foundation

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202202371

Reference204 articles.

1. Scaling Challenges for Advanced CMOS Devices

2. Memory leads the way to better computing

3. Metal–Oxide RRAM

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