Identification of an interface defect generated by hot electrons in SiO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108066
Reference28 articles.
1. Trap creation in silicon dioxide produced by hot electrons
2. Temperature dependence of trap creation in silicon dioxide
3. Theory of high-field electron transport in silicon dioxide
4. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
5. Dissociation kinetics of hydrogen-passivated (111) Si-SiO2interface defects
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