Electron cyclotron resonance plasma‐induced damage in AlGaAs/GaAs/AlGaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104328
Reference23 articles.
1. Surface Damage on GaAs Induced by Reactive Ion Etching and Sputter Etching
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5. Electrical modelling of Ion- Damaged GaAs schottky barrier interfaces
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1. Influence of plasma process on III-V/Ge multijunction solar cell via etching;Solar Energy Materials and Solar Cells;2019-06
2. Oxygen plasma induced degradation in InGaAs/InP heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
3. Effects of Annealing on Damage in AlGaAs Induced by Electron Cyclotron Resonance SF 6 / CHF 3 Plasma Etching;Journal of The Electrochemical Society;1996-03-01
4. Plasma-induced damage of GaAs pn-junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-01
5. Damage induced by exposing AlGaAs layers to electron cyclotron resonance SF6/CHF3plasma;Applied Physics Letters;1994-08-29
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