Influence of plasma process on III-V/Ge multijunction solar cell via etching

Author:

de Lafontaine Mathieu,Pargon Erwine,Petit-Etienne Camille,Gay Guillaume,Jaouad Abdelatif,Gour Marie-Josée,Volatier Maïté,Fafard Simon,Aimez Vincent,Darnon Maxime

Funder

Université de Sherbrooke

CNRS

INSA Lyon

ECL

CPE

UGA

FRQNT

ANR

Natural Sciences and Engineering Research Council of Canada

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. Modelling of the perimeter recombination effect in gaas-based micro-solar cell;Belghachi;Sol. Energy Mater. Sol. Cells,2006

2. Anisotropic and smooth inductively coupled plasma etching of iii-v laser waveguides using hbr- o2 chemistry;Bouchoule;J. Electrochem. Soc.,2008

3. 1. C. Colin, A. Jaouad, M. Darnon, M. De Lafontaine, M. Volatier, A. Boucherif, R. Ar??s, S. Fafard, V. Aimez, The handling of thin substrates and its potential for new architectures in multi-junction solar cells technology. AIP Conference Proceedings 1881

4. 2., 040001, 2017. URL ???https://aip.scitation.org/doi/abs/10.1063/1.5001423???.

5. Influence of the junction area to edge area ratio on the open-circuit voltage of silicon solar cells;Cuevas;IEEE Trans. Electron Devices,1981

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