Removal of the sulfur passivation overlayer on a (NH4)2Sx‐treated GaAs surface by vacuum‐ultraviolet irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105149
Reference15 articles.
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1. Electrical characterization of liquid-phase-deposited SiON on (NH4 )2 S-treated GaAs;physica status solidi (a);2013-05-13
2. Indium oxide ceramics doped by selenium for one-electrode gas sensors;Sensors and Actuators B: Chemical;2012-11
3. High-Quality SiO2Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition;Japanese Journal of Applied Physics;2008-05-16
4. Chalcogenide passivation of III–V semiconductor surfaces;Semiconductors;1998-11
5. Surface State Behavior and Neutralization of Impurities in Sulfur-Treated, Hydrogenated, and Annealed GaAs;physica status solidi (a);1998-10
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