High-Quality SiO2Grown on (NH4)2Sx-Treated GaAs by Liquid Phase Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Kink defects and Fermi level pinning on (2×4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectron spectroscopy
2. The effect of phosphorous and sulfur treatment on the surface properties of InP
3. Removal of the sulfur passivation overlayer on a (NH4)2Sx‐treated GaAs surface by vacuum‐ultraviolet irradiation
4. Chemical bonding and structure of the sulfur treated GaAs(111)B surface
5. Quality optimization of liquid phase deposition SiO2 films on gallium arsenide
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